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Development of Ferroelectric Phase in TiN/Hf-Zr-O/TiN Capacitors Prepared by Sputter Deposition and Capped Anneal
https://aist.repo.nii.ac.jp/records/2001875
https://aist.repo.nii.ac.jp/records/20018753b04429e-433f-4138-a3f8-9a66f4e6d449
| Item type | Research Data (v9)(1) | |||||||||||||
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| PubDate | 2014-01-01 | |||||||||||||
| Data name | ||||||||||||||
| Title | Development of Ferroelectric Phase in TiN/Hf-Zr-O/TiN Capacitors Prepared by Sputter Deposition and Capped Anneal | |||||||||||||
| Language | en | |||||||||||||
| Description of data | ||||||||||||||
| Description Type | Abstract | |||||||||||||
| Description | Electrical properties of Hf-Zr-O films are examined in metal-insulator-metal capacitors. It is found that capped anneal process promotes transition of crystalline phases and induces ferroelectric behavior at 50/50 ratio of Hf/Zr composition. Correlation of ferroelectricity with the Hf/Zr composition and the film thickness are systematically investigated. | |||||||||||||
| Language | en | |||||||||||||
| Author (Creator) name |
右田 真司
× 右田 真司
× 太田 裕之
× 森田 行則
× 昌原 明植
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| Access Rights | ||||||||||||||
| Access Rights | open access | |||||||||||||
| Access Rights URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||
| APC | ||||||||||||||
| APC | Not required | |||||||||||||
| Rights Holder | ||||||||||||||
| Right Holder Name | 右田 真司 | |||||||||||||
| Language | en | |||||||||||||
| Publisher | ||||||||||||||
| Publisher | 応用物理学会 | |||||||||||||
| Language | en | |||||||||||||
| Date | ||||||||||||||
| Date | 2014-01-01 | |||||||||||||
| Date Type | Issued | |||||||||||||
| Language | ||||||||||||||
| Language | eng | |||||||||||||
| Resource Type | ||||||||||||||
| Resource Type Identifier | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| Resource Type | journal article | |||||||||||||
| Source Title | ||||||||||||||
| Source Title | Extended Abstracts of 2014 International Conference on Solid State Devices and Materials | |||||||||||||
| Language | en | |||||||||||||
