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Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf0.5Zr0.5O2 thicknesses in MIM Capacitors

https://aist.repo.nii.ac.jp/records/2001874
https://aist.repo.nii.ac.jp/records/2001874
eb02fc55-bfd6-4140-82c9-3e1e1063f700
Item type Research Data (v9)(1)
PubDate 2014-01-01
Data name
Title Dependence of dielectric constants, leakage currents, and ferroelectric hystereses on Hf0.5Zr0.5O2 thicknesses in MIM Capacitors
Language en
Description of data
Description Type Abstract
Description Ferroelectricity is attractive for the functionalization of electronic devices. It is valuable not only for memory applications, but also for logic devices that materialize a steep subthreshold slope [1]. Existence of ferroelectric property in metastable HfO2–based systems has been recently reported and widely investigated [2-6]. These HfO2-based systems are friendly with CMOS process because they are free from lead and bismuth. Ferroelectric properties in these systems are closely correlated with the chemical composition of metal elements [3, 5] and film thicknesses [6]. One of the key processes is the capped-annealing (Cap-PDA) that promotes formation of metastable crystalline phases in HfO2 systems [7]. In this work, focusing on Hf0.5Zr0.5O2 films, we examined the impact of film thickness on dielectric constant, leakage current, and ferroelectric switching systematically.
Language en
Author (Creator) name 右田 真司

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右田 真司

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太田 裕之

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森田 行則

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昌原 明植

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Access Rights
Access Rights open access
Access Rights URI http://purl.org/coar/access_right/c_abf2
APC
APC Not required
Rights Holder
Right Holder Name 右田 真司
Language en
Publisher
Publisher 応用物理学会
Language en
Date
Date 2014-01-01
Date Type Issued
Language
Language eng
Resource Type
Resource Type Identifier http://purl.org/coar/resource_type/c_6501
Resource Type journal article
Source Title
Source Title 応用物理学会学術講演会予稿集
Language en
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