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Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching
https://aist.repo.nii.ac.jp/records/2001777
https://aist.repo.nii.ac.jp/records/2001777fad49cef-ec43-49cf-afca-ee5b2b245d4c
| Item type | Research Data (v9)(1) | |||||||||||||||
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| PubDate | 2015-01-01 | |||||||||||||||
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| Title | Fabrication of high-k/metal-gate MoS2 field-effect transistor with a device isolation process utilizing Ar-plasma etching | |||||||||||||||
| Language | en | |||||||||||||||
| Description of data | ||||||||||||||||
| Description Type | Abstract | |||||||||||||||
| Description | We investigated a device isolation process for MoS2-based devices and fabricated high-k/metal-gate MoS2 MOSFETs. An Ar-ion etching process was utilized for the device isolation process, which induces no damage in the device channel as confirmed by Raman spectroscopy. A top-gate MoS2 MOSFET was fabricated with a HfO2 thin film with a thickness of 16 nm as the gate insulator. Utilizing capacitance–voltage (C–V) measurements, the capacitance equivalent thickness (CET) was estimated as 5.36 nm, which indicates that successful gate stack with the sufficiently thin insulator was realized. The device successfully exhibited a mobility of 25.3 cm2/(V•s), a subthreshold swing (SS) of 86.0 mV/decade, and an ON/OFF ratio of 107. This satisfactory device performance demonstrates the feasibility of the proposed device isolation process. | |||||||||||||||
| Language | en | |||||||||||||||
| Author (Creator) name |
二之宮 成樹
× 二之宮 成樹
× 森 貴洋
× 内田 紀行
× 渡辺 英一郎
× 津谷 大樹
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| Access Rights | ||||||||||||||||
| Access Rights | open access | |||||||||||||||
| Access Rights URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||||
| APC | ||||||||||||||||
| APC | Not required | |||||||||||||||
| Rights Holder | ||||||||||||||||
| Right Holder Name | 二之宮 成樹 | |||||||||||||||
| Language | en | |||||||||||||||
| Publisher | ||||||||||||||||
| Publisher | IOP PUBLISHING LTD | |||||||||||||||
| Language | en | |||||||||||||||
| Date | ||||||||||||||||
| Date | 2015-01-01 | |||||||||||||||
| Date Type | Issued | |||||||||||||||
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| Language | eng | |||||||||||||||
| Resource Type | ||||||||||||||||
| Resource Type Identifier | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| Resource Type | journal article | |||||||||||||||
| Identifier | ||||||||||||||||
| Identifier | 10.7567/JJAP.54.046502 | |||||||||||||||
| Identifier Type | DOI | |||||||||||||||
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| Relation Type | isVersionOf | |||||||||||||||
| Identifier Type | URI | |||||||||||||||
| Related Identifier | http://iopscience.iop.org/article/10.7567/JJAP.54.046502/meta | |||||||||||||||
| Language | ja | |||||||||||||||
| Related Title | 関連 URI | |||||||||||||||
| Source Title | ||||||||||||||||
| Source Title | JAPANESE JOURNAL OF APPLIED PHYSICS | |||||||||||||||
| Language | en | |||||||||||||||
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| Volume | 54 | |||||||||||||||
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| Issue | 4 | |||||||||||||||
| Page Start | ||||||||||||||||
| Start Page | 046502_1 | |||||||||||||||
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| End Page | 046502_4 | |||||||||||||||
